Liquid crystal display device using thin-film transistor and method for manufacturing the same

ABSTRACT

The present invention provides a liquid crystal display device using a thin-film transistor, and the invention also provides a method for manufacturing the liquid crystal display device.  
     In openings of a first light transmission type photosensitive resin formed on an insulating substrate, a gate electrode, a source line, and a pixel contact layer are prepared. On these components, a gate insulator, a semiconductor layer, an ohmic contact layer (n +  semiconductor layer) and a protective film are prepared. Further, in openings of a second light transmission type photosensitive resin, a source electrode, a drain electrode, and a pixel electrode are prepared. Also, the crossing portion connecting line formed at the opening of the second light transmission type photosensitive resin is, similarly to the source line or the gate line, made of baked silver produced by baking an ink containing silver fine particles plotted by ink jet process. This makes it possible to simplify the production process and to prevent the increase of wiring resistance of the source line and gate line.

FIELD OF THE INVENTION

The present invention relates to a liquid crystal display device using athin-film transistor with a gate electrode, a source electrode, and adrain electrode prepared by ink jet plotting. The invention also relatesto a method for manufacturing the same.

BACKGROUND OF THE INVENTION

A thin-film transistor (TFT) used in a liquid crystal display device ofactive matrix type comprises a gate electrode with metal film such aschromium, a gate insulator film made of SiNx, a semiconductor layer madeof amorphous silicon, an ohmic contact layer doped with impurities suchas phosphor, a source electrode and a drain electrode made of metal filmsuch as chromium, and a protective film laminated in this order on asubstrate.

The thin-film transistor as given above is produced by preparing amultiple of thin films on a glass substrate and by performingphoto-lithographic process on the thin films. However, for preparing thethin films and for patterning, expensive and low-throughput vacuumsystems with complicated structure such as sputtering system, CVD systemand etching system must be used. This makes the manufacturing processmore complicated and requires higher manufacturing cost.

In this respect, the Patented Reference 1 as given below discloses themanufacture of a thin-film transistor in an atmospheric condition asmuch as possible. This Patented Reference 1 describes that a gateelectrode film of thin-film transistor is produced by ink jet procedureusing a liquid material containing a conductive material and to form asource area and a drain area of the thin-film transistor by using aliquid material containing a semiconductor material coated by ink jetprocedure.

Also, the Patented Reference 2 describes means to reduce thephoto-lithographic process and to simplify the production process, inwhich a gate bus line and a source bus line are formed on the samelayer, and the source bus line being cut off at the crossing portion isbridged in the layer of pixel electrode when the pixel electrode isprepared.

[Patented Reference 1] JP-A-2003-318193

[Patented Reference 2] JP-A-1997-265113

In the manufacture of the thin-film transistor as described in thePatented Reference 1, it is described that the number of the vacuumsystems needed is reduced and production processes are simplified byintroducing the ink jet procedure. However, many production processesare still required, and it is not possible to manufacture the thin-filmtransistors at low cost and with high throughput.

According to the method described in the Patented Reference 2, atransparent electrode material with high specific resistance such asindium tin oxide (ITO) (specific resistance: 100 to 1000 μΩ·cm) is usedas pixel electrode. As a result, high resistance develops atcross-linking portion to connect the source line.

Normally, a metal material with specific resistance of less than 3 μΩ·cmis used as the bus line. However, even when the length of the blidgedportion is designed to be about 5% to 1% of the length of the bus line,the resistance of the bus line is as high as 1.3 to 3 times. It ispractically impossible to design the length of the blidged portion to 5%or lower. Further, contact resistance develops between the metal of thebus line with lower specific resistance and ITO with high specificresistance, and this further increases contact resistance at thecross-linking portion.

For large-scale production of high-precision panel for LCD-TV of100-inch class to be used in the future, the manufacturing method cannotbe used, in which wiring resistance is increased even by 1%.

In this respect, it is an object of the present invention to provide aliquid crystal display device using a thin-film transistor and a methodfor manufacturing the same, by which it is possible to simplify theproduction process and to reduce the wiring resistance withoutincreasing wiring resistance of the source line and the gate line.

SUMMARY OF THE INVENTION

Auxiliary capacity lines except the source line and the gate line of thethin-film transistor and the pixel contact layer and the crossingportion connecting line are formed at the same time in openings of afirst light transmission type photosensitive resin by ink jet procedureusing an ink containing metal fine particles.

In the opening of a second light transmission type photosensitive resin,a source electrode and a drain electrode of thin-film transistor and apixel electrode and a crossing portion connecting line are formed at thesame time by ink jet procedure using different types of ink.

In particular, to the crossing portion connecting line, the source lineor the gate line is connected by using an ink containing the same typeof metal fine particles as that of the source line or the gate line.

Because the ink jet plotting process is used, no expensive vacuum system(such as sputtering system and metal etching system) is required and theproduction cost can be reduced. Also, the number of the productionprocesses is extensively reduced, and it is possible to decrease theproduction cost to a great extent. Also, through extensive reduction ofprocedures, on-demand type production without requiring inventory can beachieved.

Different types of line patterning can be performed by ink jet plottingat the same time using a photo mask. Patterning can be carried out byusing the light transmission type photosensitive resin. The lighttransmission type photosensitive resin thus patterned can be used forink jet plotting lines and also can be used as etching mask.

In particular, for the crossing portion connecting lines to be formed inthe opening of the second light transmission type photosensitive resin,an ink containing the same type of metal fine particles as that of thesource line or gate line is used. Thus, wiring resistance is notincreased even when very few masks are used.

Further, the thin-film transistor (TFT) array and the method formanufacturing the same have not been known in the past, in which theproduction can be achieved without increasing the wiring resistance andby reducing the number of masks used.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematical diagram of a liquid crystal display deviceaccording to the present invention;

FIG. 2 is a cross-sectional view of a thin-film transistor of thepresent invention;

FIG. 3 represents drawings to show processes to prepare gate lines andsource lines of the thin-film transistor shown in FIG. 2;

FIG. 4 represents drawings to show processes to prepare the thin-filmtransistor subsequent to those of FIG. 3;

FIG. 5 represents drawings to show processes to prepare the thin-filmtransistor subsequent to those of FIG. 4;

FIG. 6 represents drawings to show processes to prepare pixelssubsequent to those of FIG. 5;

FIG. 7 is a plan view of the thin-film transistor prepared as shown inFIG. 3 to FIG. 6;

FIG. 8 is a cross-sectional view of another thin-film transistoraccording to the present invention;

FIG. 9 represents drawings to show processes for preparing the thin-filmtransistor shown in FIG. 8;

FIG. 10 represents drawings to show processes for preparing thethin-film transistor subsequent to those of FIG. 9;

FIG. 11 represents drawings to show processes for preparing thethin-film transistor subsequent to those of FIG. 10;

FIG. 12 represents drawings to show processes for preparing thethin-film transistor subsequent to those of FIG. 11 and a plan view ofthe thin-film transistor;

FIG. 13 is a cross-sectional view of still another thin-film transistoraccording to the present invention;

FIG. 14 represents drawings to show processes for preparing thethin-film transistor of FIG. 13; and

FIG. 15 represents drawings to show processes for preparing thethin-film transistor subsequent to those shown in FIG. 14 and a planview of the thin-film transistor.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Description will be given below on embodiments of the present inventionreferring to the drawings.

Embodiment 1

FIG. 1 is a schematical diagram of a liquid crystal display device ofactive matrix type using a thin-film transistor according to the presentinvention. To match scan lines 101 as selected by a scan line drivingcircuit 100, data (voltage) is supplied to a thin-film transistor 10from a data line driving circuit 200 via data lines 201.

The thin-film transistor 10 is provided at an intersection of the scanline 101 and the data line 201. The scan line 101 is connected to a gateelectrode 13 of the thin-film transistor 10. The data line 201 isconnected to a source electrode 19 of the thin-film transistor 10.

A drain electrode 19′ of the thin-film transistor 10 is connected to apixel electrode 21 of a liquid crystal element 20. The liquid crystalelement 20 is positioned between the pixel electrode 21 and a commonelectrode 22, and it is driven by data (voltage) supplied to the pixelelectrode 21. An auxiliary capacity 23 to temporarily maintain the data(voltage) is connected between the drain electrode 19′ and an auxiliarycapacity line 24.

FIG. 2 is a cross-sectional view of the thin-film transistor 10 providedin matrix arrangement shown in FIG. 1. A source line 201′, the gateelectrode 13 and a pixel contact layer 21′ are prepared in openings of afirst light transmission type photosensitive resin 12 formed on aninsulating substrate (glass substrate) 11 by ink jet plotting using anink containing metal fine particles.

Also, a source electrode 19, a drain electrode 19′ and the pixelelectrode 21 are formed in openings of a second light transmission typephotosensitive resin 12′ prepared in the last process by ink jetplotting using an ink containing metal fine particles.

Reference numeral 14 denotes a gate insulator film, numeral 15 denotes asemiconductor layer, numeral 16 represents an n⁺ semiconductor layer(ohmic contact layer), and numeral 17 represents a protective film.

FIG. 3 represents drawings to show processes for preparing gate-sourcelines for the thin-film transistor 10 as shown in FIG. 2. First, thefirst light transmission type photosensitive resin 12 is coated on arinsed insulating substrate 11. As shown in FIG. 3 (a), the processes oflight exposure, developing, and baking are carried out using a firstphotomask, on which patterned portions (the gate line 101′, the sourceline 201′, the auxiliary capacity line 24′, the gate electrode 13, andthe pixel contact layer 21′) is formed.

FIG. 3 (b) and FIG. 3 (c) represents cross-sectional views of thethin-film transistor along a broken line A-A′ and of the crossingportion of the bus line along a broken line B-B′ and a broken line C-C′.Along the broken line B-B′, the gate line 101′ is designed to becontinuous and the source line 201′ is disconnected, while it may bedesigned in such manner that the gate line 101′ is disconnected and thesource line 201′ is continuous. In this case, the cross-sectional viewis the same as the cross-sectional view along the broken line C-C′.

Next, as shown in FIG. 3 (b), all portions except the patterned portionare processed by water-repellent processing and the patterned portion isprocessed by hydrophilic processing so that the ink containing metalfine particles (silver fine particles) for ink jet plotting isintensively plotted on the patterned portion. Then, the ink containingthe metal fine particles on the patterned portion is completely baked.On the auxiliary capacity line 24′, a transparent conductive substance(ITO) is coated by ink jet coating.

Finally, as shown in FIG. 3 (c), a cap metal 30 consisting of Ni isplaced on the patterned portion. Then, ink is plotted by ink jet processand the ink is completely baked.

FIG. 4 represents drawings to show processes for preparing the thin-filmtransistor subsequent to those of FIG. 3. As shown in FIG. 4 (a), a gateinsulator 14 comprising SiNx, a semiconductor film (semiconductor layer)15 comprising a-Si, and an n⁺ semiconductor film (ohmic contact layer)16 are formed one upon another. A cross-sectional view of the thin-filmtransistor 40 along the broken line A-A′ is shown in FIG. 4 (b), andcross-sectional views along the broken lines B-B′ and C-C′ of a crossingportion 41 of the line is also shown.

Next, a resist is coated, and as shown in FIG. 4 (b), the resist isexposed to light and developed by using an island pattern mask to formthe thin-film transistor 40 and the crossing portion 41 of the line inisland-like shape. Half-exposure 42 is performed on the gate electrode13 of the thin-film transistor. FIG. 4 (c) is a cross-sectional viewafter the development of the resist. FIG. 4 (c) and FIG. 4 (d)represents cross-sectional views of the thin-film transistor 40 alongthe broken line A-A′ and of the crossing portion 41 along the brokenlines B-B′ and C-C′.

Finally, as shown in FIG. 4 (d), dry etching is carried out on the n⁺semiconductor film 16 and the semiconductor film 15.

Further, FIG. 5 represents drawings to show processes for preparing thethin-film transistor subsequent to those of FIG. 4. As shown in the planview of FIG. 5 (a) and in the cross-sectional view of FIG. 5 (b), aresist 50 is prepared by ink jet plotting around the thin-filmtransistor 40 prepared in island-like shape and around the crossingportion 41 of the line. FIG. 5 (b), FIG. 5 (c), and FIG. 5 (d) eachrepresent a cross-sectional view of the thin-film transistor 40 alongthe broken line A-A′ and cross-sectional views of the crossing portion41 of the line along the broken line B-B′ and the broken line C-C′.

Next, as shown in FIG. 5 (c), the gate insulator 14 is processed by dryetching (cap ash) using CF₄/O₂. The half-exposed portion 42 is removed,and the n⁺ semiconductor film 16 on the half-exposed portion 42 isprocessed by dry etching using SF₆/Cl₂.

Finally, as shown in FIG. 5 (d), the resist 50 is removed off, and aprotective film 17 comprising SiNx is prepared.

FIG. 6 represents drawings to show processes for preparing pixelsubsequent to those of FIG. 5. First, the second light transmission typephotosensitive resin 12′ is coated. Then, the processes of lightexposure, development, and baking are performed using a second photomaskwith a patterned portion on it (a gate line 101′, a source line 201′, athin-film transistor 40, and a crossing portion 41) as shown in FIG. 6(a). FIG. 6 (b), FIG. 6 (c), and FIG. 6 (d) each represents across-sectional view of the thin-film transistor 40 along the brokenline A-A′, and a cross-sectional view of the crossing portion 41 alongthe line broken lines B-B′ and C-C′.

Next, as shown in FIG. 6 (c), the protective film 17 and the cap metal30 are processed by etching. Then, as shown in FIG. 6 (d), a sourceelectrode 19, a drain electrode 19′, a pixel electrode 21, and acrossing portion connecting line 60 are prepared by ink jet coating, andcomplete baking is carried out. A low-resistance barrier metal is usedas the source electrode 19 and the drain electrode 19′. The pixelelectrode 21 is made of conductive substance (ITO). Silver fineparticles are used for the crossing portion connecting line 60. FIG. 7shows a plan view.

FIG. 7 is a plan view of the arrangement shown in FIG. 6 (d). It is aplan view when the thin-film transistor 10 of FIG. 2 is arranged inmatrix-like form as shown in FIG. 1. In openings of a second lighttransmission type photosensitive resin 12′, a source electrode 19, adrain electrode 19′, a pixel electrode 21 and a crossing portionconnecting line 60 are prepared.

Embodiment 2

FIG. 8 is a cross-sectional view of the thin-film transistor 10 shown inFIG. 1. It is different from the cross-sectional view of the thin-filmtransistor 10 of FIG. 2 in the arrangement of the ohmic contact layer(n⁺ semiconductor layer) 16 and the protective layer 17. Descriptionwill be given below on the processes for manufacturing this thin-filmtransistor. The gate-source line process is the same as the processshown in FIG. 3. The next process for preparing the thin-film transistoris shown in FIG. 9.

FIG. 9 represents drawings to show processes for preparing the thin-filmtransistor subsequent to the gate-source line process shown in FIG. 3.As shown in FIG. 9 (a), a gate insulator 14, an a-Si semiconductor film15 and a protective film 17 are sequentially formed. FIG. 9 (c)represents a cross-sectional view of the thin-film transistor 40 alongthe broken line A-A′, the line crossing portion 41 along the brokenlines B-B′ and the broken line C-C′.

Next, similarly to the procedure shown in FIG. 6 (a), a second lighttransmission type photosensitive resin 12′ is coated. As shown in FIG. 9(b), the processes of light exposure, development and baking are carriedout by using a second photomask to form a thin-film transistor 40 and aline crossing portion 41 in island-like shape on the gate line 101′ andon the source line 201′. The thin-film transistor 40 and the linecrossing portion 41, and a part of the pixel contact layer 21′ as shownin FIG. 9 (c) are prepared as half-exposed portions 42.

FIG. 10 represents drawings to show processes for preparing thethin-film transistor subsequent to those of FIG. 9. As shown in FIG. 10(a), the protective film 17 is processed by DHF wet etching or byetching with CF₄. Next, as shown in FIG. 10 (b), the semiconductor film15 and the half-exposed portion 42 are processed by dry etching withSF₆.

Then, as shown in FIG. 10 (c), a resist 110 is prepared by ink jetcoating on the area except the thin-film transistor 40 and the linecrossing portion 41. FIG. 10 (d) is a cross-sectional view.

FIG. 11 represents drawings to show processes for preparing thethin-film transistor subsequent to those of FIG. 10. As shown in FIG. 11(a), a gate insulator 14 and a protective film 17 are processed by dryetching with CF₄ or C₂F₈. Next, as shown in FIG. 11 (b), doping isperformed with P ions, and an ohmic contact layer (n⁺ semiconductorlayer) 16 is prepared. Then, as shown in FIG. 11 (c), the resist 110 isremoved off, and a cap metal 30 is processed by selective etching withDHF as shown in FIG. 11 (d).

FIG. 12 represents drawings to show processes for preparing thethin-film transistor subsequent to those of FIG. 11 and the process forforming pixel electrode. As shown in FIG. 12 (a), a source electrode 19,a drain electrode 19′, a pixel electrode 21, and a crossing portionconnecting line 60 are prepared by ink jet process. FIG. 12 (b) is aplan view.

Embodiment 3

FIG. 13 is a cross-sectional view of a thin-film transistor 10 shown inFIG. 1. This is different from the cross-sectional view of the thin-filmtransistor of FIG. 8 in that the second light transmission typephotosensitive resin 12′ is not used. Description will be given below onthe process for manufacturing the thin-film transistor. The gate-sourceline process is the same as the process shown in FIG. 3. The subsequentprocess for preparing the thin-film transistor is the same as theprocesses shown in FIG. 9, FIG. 10, and FIG. 11 (b). FIG. 14 shows theprocesses subsequent to the processes shown in FIG. 11 (b).

The arrangement shown in FIG. 14 is different from the arrangement ofFIG. 11 (c) and FIG. 11 (d) in that the cap metal 30 is processed byetching as shown in FIG. 14 (a), and the second light transmission typephotosensitive resin 12′ and the resist 110 are removed off as shown inFIG. 14 (b).

FIG. 15 represents processes for preparing the thin-film transistorsubsequent to those of FIG. 14 and the process for preparing pixelelectrode. As shown in FIG. 15 (a), a source electrode 19, a drainelectrode 19′, a pixel electrode 21 and a crossing portion connectingline 60 are prepared by ink jet coating. FIG. 15 (b) is a plan view.

Embodiment 4

Based on the embodiments as described above, TFT arrays to match fullhi-vision (full HD) of 32 type wide and 1920×RGB×1080 pixels wereprepared in the specifications of (1)-(3) as given below. As comparativeexamples, 32 type wide TFT arrays were prepared in the samespecifications according to the examples already known.

(1) Source line length: 400 mm; line width: 10 μm; line material: silver(Ag) (specific resistance 2.5 μΩ·cm); film thickness: 0.5 μm).

(2) Crossing portion connecting line length of the source line: 20 μm(1080 points in total); contact area: 10 μm×10 μm (2160 points intotal).

(3) Crossing portion connecting line material: [The present invention]silver (Ag) (specific resistance: 2.5 μΩ·cm); [comparative example 1:]ITO (specific resistance: 100 μΩ·cm).

Resistance value of the straight line was 2 kΩ.

As a result, the source line resistance in the present invention showedan increase of less than 1% compared with the straight source lineresistance without crossing portion connecting line. The details of theline resistance of the source line and specific contact resistance areshown in Tables 1 and 2 together with the data of the comparativeexamples. TABLE 1 Present invention Comparative example 1 {circle around(1)} Straight bus line   1892 Ω 1892 Ω resistance {circle around (2)}Crossing portion   108 Ω 4320 Ω connecting line resistance {circlearound (3)} Contact resistance  10.8 Ω 2160 Ω Source line resistance2010.8 Ω 8372 Ω ({circle around (1)} + {circle around (2)} + {circlearound (3)}) Resistance increasing ratio 0.5% 320% to straight bus line

TABLE 2 Comparative Present invention example 1 Specific contactresistance 0.05 × 10⁻⁸ Ω cm² 10 × 10⁻⁸ Ω cm²

Embodiment 5

Similarly, TFT arrays to match full hi-vision (full HD) of 32 type wide1920×RGB×1080 pixels was prepared in the specifications (1) to (3) asgiven below according to the embodiments as described above. Also, asComparative Example 2, a mask for pixel and a mask for cross-linkingportion were prepared separately so that cross-linking portions of theexamples already known (referred as crossing portion connecting line inthe present invention) can be connected with silver (Ag), and a 32 typewide TFT array was prepared according to the same specifications.

(1) Source line length: 400 mm; line width: 10 μm; line material: silver(Ag) (specific resistance 2.5 μΩ·cm); film thickness: 0.5 μm.

(2) Crossing portion connecting line length of the source line: 20 μm(1080 points in total); contact area: 10 μm×10 μm (2160 points intotal).

(3) Crossing portion connecting line material: [present invention] bakedsilver (specific resistance: 2.5 μΩ·cm); [Comparative Example 2]sputtered silver (Ag) (specific resistance: 2.5 μΩ·cm).

Resistance value of the straight bus line was 2 kΩ.

As a result, the source line resistance of the present invention showedan increase of less than 1% compared with straight bus line resistancewithout the crossing portion connecting line. However, in the connectionusing sputtered silver (Ag), the resistance increased by more than 10%.The details of the source line resistance and specific contactresistance are shown in Tables 3 and 4 together with the data ofComparative Example 2. TABLE 3 Present invention Comparative example 2{circle around (1)} Straight bus line   1892 Ω 1892 Ω resistance {circlearound (2)} Crossing portion   108 Ω  108 Ω connecting line resistance{circle around (3)} Contact resistance  10.8 Ω  216 Ω Source lineresistance 2010.8 Ω 2216 Ω ({circle around (1)} + {circle around (2)} +{circle around (3)}) Resistance increasing ratio 0.5% 10.8% to straightbus line

TABLE 4 Comparative Present invention example 2 Specific contact 0.05 ×10⁻8 Ωcm² 1 × 10⁻8 Ωcm² resistance

1. A liquid crystal display device, comprising a thin-film transistorwith a gate electrode, a gate insulator, a semiconductor layer, an ohmiccontact layer, a source electrode, a drain electrode, and a protectivefilm sequentially formed on an insulating substrate, a gate line withthe thin-film transistor in matrix-like arrangement and having the gateelectrode, a source line connected to the source electrode, and acrossing portion connecting line on a gate line or a source line,wherein: among the gate line, the source line and the crossing lineconnecting line, at least the gate line and the source line are formedin openings of a light transmission type photosensitive resin.
 2. Aliquid crystal display device according to claim 1, wherein said gateline, said source line and said crossing portion connecting line aremade of baked silver.
 3. A liquid crystal display device, comprising athin-film transistor with a gate-electrode, a gate insulator, asemiconductor layer, an ohmic contact layer, a source electrode, a drainelectrode, and a protective film sequentially formed on an insulatingsubstrate, a pixel electrode with the thin-film transistor provided inmatrix-like arrangement and connected to the drain electrode via a pixelcontact layer, a gate line having the gate electrode, a source lineconnected to the source electrode, an auxiliary capacity line connectedto an auxiliary capacity, and a crossing portion connecting lineprovided on either one of the gate line or the source line and on theauxiliary capacity line, wherein: the auxiliary capacity line exceptsaid pixel contact layer, the gate line, the source line, and thecrossing portion connecting line is provided in openings of a lighttransmission type photosensitive resin.
 4. A liquid crystal displaydevice according to claim 3, wherein said ohmic contact layer is an n⁺layer.
 5. A liquid crystal display device according to claim 3, whereinsaid ohmic contact layer is an n⁺ layer where a semiconductor layer ision-doped.
 6. A liquid crystal display device according to claim 3,wherein the auxiliary capacity line except said pixel contact layer, thegate line, and the crossing portion connecting line is formed inopenings of a light transmission type photosensitive resin by ink jetprocess.
 7. A liquid crystal display device according to claim 3,wherein said source electrode, said drain electrode, said pixelelectrode and said crossing portion connecting line are prepared by inkjet process.
 8. A liquid crystal display device according to claim 3,wherein said auxiliary capacity line and said pixel electrode areprepared by processing a transparent conductive substance by ink jetprocess.
 9. A method for manufacturing a liquid crystal display device,comprising a thin-film transistor with a gate electrode, a gateinsulator, a semiconductor layer, an ohmic contact layer, a sourceelectrode, a drain electrode, and a protective film sequentially formedon an insulating substrate, a pixel electrode with the thin-filmtransistor provided in matrix-like arrangement and connected to thedrain electrode via a pixel contact layer, a gate line having the gateelectrode, a source line connected to the source electrode, an auxiliarycapacity line connected to an auxiliary capacity, and a crossing portionconnecting line provided on either one of the gate line or the sourceline and on the auxiliary capacity line, wherein: the auxiliary capacityline except said pixel contact layer, said gate line, said source lineand said crossing portion connecting line is formed at the same time onthe same layer by ink jet plotting in openings of a light transmissiontype photosensitive resin where said layers and lines are formed bypatterning at the same time by using a photomask.
 10. A method formanufacturing a liquid crystal display device according to claim 9,wherein: the auxiliary capacity line except said pixel contact layer,said gate line, said source line, and said crossing portion connectingline are formed at the same time on the same layer by ink jet prottingin openings of a first light transmission type photosensitive resinwhere said layers and line are formed by patterning at the same time;and said source electrode, said drain electrode, said pixel electrode,and said crossing portion connecting line are formed at the same time onthe same layer by ink jet coating in openings of a second lighttransmission type photosensitive resin where said electrodes and linesare formed by patterning at the same time by using a second photomask.11. A method for manufacturing a liquid crystal display device accordingto claim 10, wherein: said second light transmission type photosensitiveresin formed by said second photomask is also used as an opening toprepare the source electrode, the drain electrode, the pixel electrodeand the crossing portion connecting line by ink jet protting, and saidsecond photosensitive resin is also used as an etching mask for formingthe thin-film transistor at the same time.
 12. A method formanufacturing a liquid crystal display device according to claim 9,wherein: the auxiliary capacity line except said pixel contact layer,said gate line, said source line and said crossing portion connectingline are formed at the same time on the same layer by ink jet prottingin openings of a light transmission type photosensitive resin where saidlayers and lines are formed by patterning at the same time by using afirst photomask; and said source electrode, said drain electrode, saidpixel electrode, and said crossing portion connecting line are formed atthe same time on the same layer by ink jet coating in openings of aprotective film where said electrodes and lines are formed by patterningat the same time by using a second photomask.